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Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi
Materials Science Forum, 527-529, p.1347 - 1350, 2006/00
Charge induced in 6H-SiC pn diodes by oxygen ion microbeams was examined in an energy range between 6 and 18 MeV. To minimize the influence of damage, single ion hit Transient Ion Beam Induced Current (TIBIC) measurement system, in which the transient current induced by single ion incidence can be measured, was used in this study. The value of charge increases with increasing reverse applied bias, and the saturation of charge is observed when the depletion layer becomes longer than ion range. An increase of collected charge by the funneling effect (the generation of a transient electric filed) is observed in the case of the depletion layer shorter than ion range. The charge collection efficiency is estimated to be 100 % in the saturation region (the depletion layer longer than ion range). It strongly suggests that high quality particle detectors are fabricated using SiC.
p diodes using transient ion beam-induced currentOshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04
Times Cited Count：9 Percentile：55.97(Instruments & Instrumentation)In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.
Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.177 - 180, 2004/10
no abstracts in English
Kamiya, Tomihiro; Oikawa, Masakazu*; Oshima, Takeshi; Hirao, Toshio; Lee, K. K.; Onoda, Shinobu*; Laird, J. S.
Nuclear Instruments and Methods in Physics Research B, 210, p.206 - 210, 2003/09
Times Cited Count：1 Percentile：12.51(Instruments & Instrumentation)no abstracts in English
Oshima, Takeshi; Lee, K. K.; Onoda, Shinobu; Kamiya, Tomihiro; Oikawa, Masakazu*; Laird, J. S.; Hirao, Toshio; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 206(1-4), p.979 - 983, 2003/05
Times Cited Count：8 Percentile：50.24(Instruments & Instrumentation)Ion beam induced current for pn SiC diode was observed by using MeV range ion beams.The diodes used in this study were pn diode fabricated on n-type epitaxial 6H-SiC. The p region was formed using Al-ion implantation at 800 
C and subsequent annealing at 1800 C. The value of charge collection for diode applied to 30V by 12MeV-Ni microbeam irradiationis estimated to be (1.7-1.8)
10
Q from the analyzing transient-IBIC measurement.The efficiency of the charge collection is 85-93%.
Nishijima, Toshiji*; Oshima, Takeshi; Lee, K. K.
Nuclear Instruments and Methods in Physics Research B, 190(1-4), p.329 - 334, 2002/05
Times Cited Count：11 Percentile：58.11(Instruments & Instrumentation)no abstracts in English
